Personaly i tend to use the irf gatedrivers .
The IR2101 i used on several occasions (and aplications) in combination with mcu's .http://www.irf.com/product-info/datasheets/data/ir2101.pdf
About the mosfets .
For powers like this a to220 will do easily ,but do pay a bit attention to your selection .
Irf 540 has a quite high Rdson (0,077 Ohm) http://www.datasheetcatalog.org/datasheet/stmicroelectronics/9387.pdf
where a IRF1407 has 0,0078 Ohm http://www.irf.com/product-info/datasheets/data/irf1407.pdf
This means that the I2R losses are higher .
6 Ampere2 x 0,077 Ohm = 2,772 Watt of heat (excluding swithing losses)
6 Ampere2 x 0,0078 Ohm = 0,28 Watt of heat (excluding swithing losses)
The last fet you could even use it uncolled or just a small to220 radiator
(with practical use i had powers like this uncooled @35 Celcius ,even though i did use radiators that was more the be prepared for reversed polarity)
Seen the low speed of switching i wouldn't bother to much about gate requirements .
In the datasheets you can see the amounts of nano Coulombs needed to charge / discharge your gate .
Coulombs is the amount of charge , calculated as Amperes x Seconds.
Logicly follows from this that the faster you want to dis-charge the gatecapacity with the needed amount of Coulombs the higher the amperage gets .
The bigger the die of the mosfet the bigger the capacitance of the gate ,and following of that so is the current to open and close it .