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Author Topic: doubt in diodes  (Read 858 times)
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adinand1024
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« on: January 21, 2008, 02:50:38 14:50 »

in a pn junction diode , if we inc the doping density of the p and n side(or just any one side), what will be its effect on the built in(barrier) potential difference ? (will it inc. or dec.)
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Trishool
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« Reply #1 on: January 22, 2008, 10:25:55 10:25 »

Hi,
There will be a changes in the energy bands and Fermi level if you increase or decrease doping on either side .Also the depletion layer width will change, I wouldnt call it as a Tunnel diode anymore if you do that .

Ts

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malli_1729
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« Reply #2 on: January 23, 2008, 01:14:21 13:14 »

I don't think so there is any effect will be there on the potential difference but the effect will be on the width of the
potential barrier(junction)
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